天美九一厂制作

天美九一厂制作

SKM150GB12T4G

电压:1200 V
电流:150 A
封装:惭翱顿鲍尝贰
长度:106.4 mm
宽度:62 mm
高度:30.5 mm
产物详情

产物概述

SEMIKRON   SKM150GB12T4G   晶体管, IGBT阵列&模块, 双N沟道, 223 A, 1.85 V, 1.2 kV, Module


The SKM150GB12T4G is a SEMITRANS? 3 fast IGBT Module for use with AC inverter drives and electronic welders at fsw up to 20kHz. It features insulated copper base plate using DBC technology (Direct Bonded Copper) and increased power cycling capability.


.Half-bridge switch.IGBT4 = 4th generation fast Trench IGBT (Infineon).CAL4 = Soft switching 4th generation CAL-diode.Integrated gate resistor.UL recognized, file number E63532


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