天美九一厂制作

天美九一厂制作

SEMIX604GB12E4S

电压:1200 V
电流:600 A
封装:SEMiX 4s
长度:182.5 mm
宽度:69 mm
高度:17 mm
产物详情

产物概述

IGBT Array & Module Transistor, Dual N Channel, 916A, 1.8V, 1.2kV, SEMiX 4s


**Features:


**


* IGBT4 = 4. Generation (Trench) IGBT


* VCEsat with Positive Temperature Coefficient


* High short circuit Capability, Self Limiting to 6 × ICNOM


* Electronic Welders at fSW Up-to-20 kHz


**Applications:**


* AC Inverter Drives


* UPS


* Electronic Welders at fSW Up-to-20 kHz


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