描述
The 600 V, 30 A hard-switching TRENCHSTOP? IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
特性
? Lowest VCEsatdrop for lower conduction losses
? Low switching losses
? Easy parallel switching capability due to positive temperature coefficient in VCEsat
? Very soft, fast recovery anti-parallel Emitter Controlled Diode
? High ruggedness, temperature stable behavior
? Low EMI emissions
? Low gate charge
? Very tight parameter distribution
优势:
? Highest efficiency – low conduction and switching losses
? Comprehensive portfolio in 600 V and 1200 V for flexibility of design
? High device reliability
