描述
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.
特性
TO-247-4L
Minimal Eon Losses
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
Optimized for High Speed Switching
These are Pb-Free Devices
应用
Solar InverterUninterruptible Power Inverter Supplies (UPS)Neutral Point Clamp Topology
Industrial
